Internal transitions of negatively charged excitons and many-electron effects in GaAs quantum wells

被引：0
|
作者：
McCombe, BD [1 ]
Dzyubenko, AB [1 ]
Nickel, HA [1 ]
Yeo, T [1 ]
Meining, CJ [1 ]
Sander, T [1 ]
Petrou, A [1 ]
机构：
[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
来源：
OPTICAL PROPERTIES OF 2D SYSTEMS WITH INTERACTING ELECTRONS | 2003年 / 119卷
关键词：
charged magnetoexciton; optically detected resonance; quantum well; internal transitions;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
States of charged magnetoexcitons in quasi-two-dimensional systems are investigated. The effect of excess electrons on internal transitions of negatively charged excitons X- in GaAs quantum wells is studied experimentally by optically detected resonance (ODR) spectroscopy and theoretically. An experimentally observed blue shift with excess electron density is explained in terms of collective excitations - magnetoplasmon bound to a mobile valence band hole. A possibility to observe photoluminescence of dark X- states in angle-resolved experiments is also discussed.
引用
收藏
页码：25 / 40
页数：16
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