High activation of Ga at low temperatures

被引:1
作者
Suzuki, K [1 ]
Ebiko, Y [1 ]
Kataoka, Y [1 ]
机构
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 6A期
关键词
Ga; ion implantation; activation; deactivation; diffusion;
D O I
10.1143/JJAP.44.3784
中图分类号
O59 [应用物理学];
学科分类号
摘要
We found that ion-implanted Ga was activated at a concentration of around 4 x 1019 cm(-3), independent of annealing temperature. This active concentration is higher than the solid solubility at 500 degrees C by about three orders. The activated Ga was deactivated during subsequent long-term annealing and approached its thermal equilibrium solid-solubility limit. Ga in the surface high-concentration region moved towards the surface and showed significant out-diffusion. We further evaluated the solid solubility limit of Ga, which we found to be much lower than the reported value.
引用
收藏
页码:3784 / 3788
页数:5
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