Electrical and mechanical properties of DLC coatings modified by plasma immersion ion implantation

被引：26

作者：

Chiu, S. M. ^{[1
,3
]}

Lee, S. C. ^{[2
]}

Wang, C. H. ^{[2
]}

Tai, F. C. ^{[2
]}

Chu, C. W. ^{[3
]}

Gan, Dershin ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 804, Taiwan

[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan

[3] Met Ind Res & Dev Ctr, Kaohsiung 886, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 449卷 / 1-2期

关键词：

dielectric constant; microstructure; diamond-like carbon; plasma immersion ion implantation;

D O I：

10.1016/j.jallcom.2006.02.108

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

DLC (a-C:H) films were deposited by the plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and then post-implanted by plasma immersion ion implantation (PIII) at different voltages and ion species (Ar, N-2 and C2H2). Microstructure, dielectric constant and nano-hardness of the modified DLC films were studied. It is found that implanted C2H2 ions can effectively increase the nano-hardness of DLC films from 13.5 to 25.3 GPa and reduce the dielectric constant to 2.5 in the bias voltage range of -35 to -40kV The improved properties are mainly associated with the increase in the ratio of sp(3) C-C/sp(2) C=C bonds and the reaction mechanisms in the implantation zone are discussed. (c) 2006 Elsevier B.V All rights reserved.

引用

页码：379 / 383

页数：5

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