Frequency- and Time-Domain Modeling Tools for Efficient RE/Microwave Transistor Characterization

被引：0
作者：
Gaoua, S. [1 ]
Asadi, S. [2 ]
Yagoub, M. C. E. [2 ]
机构：
[1] USTHB, Fac Elect & Informat, Algiers 16111, Algeria
[2] Univ Ottawa, Sch Informat Technol & Engn, Ottawa, ON KIN 6NS, Canada
来源：
2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009) | 2009年
基金：
加拿大创新基金会;
关键词：
Distributed elements; FET; frequency-domain; fuzzy neural networks; modeling; time-domain; FIELD-EFFECT TRANSISTORS; SIGNAL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Widely used in RF/microwave systems, active devices like field effect transistors (FETs) need to be accurately modeled to achieve a reliable system design. In this paper, the authors proposed two techniques for efficient FET modeling. First, a fuzzy-neural frequency-domain approach was developed to allow selecting the most suitable electrical equivalent circuit model of a FET. Then, a time-domain approach was investigated to help developing enhanced distributed transistor models.
引用
收藏
页码：778 / +
页数：3
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