Post SiN etching cleaning during copper and low K integration

被引：3

作者：

Beverina, A

Louis, D

Arvet, C

Lajoinie, E

Besson, P

Peyne, C

Holmes, D

Maloney, D

Lee, S

Lee, WM

机构：

[1] ST Microelect, FR-38926 Crolles, France

[2] CEA Grenoble, Gressi Leti, FR-38054 Grenoble 09, France

[3] EKC Technol Inc, Hayward, CA 94545 USA

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000 | 2001年 / 76-77卷

关键词：

cleaning; copper (Cu); low K;

D O I：

10.4028/www.scientific.net/SSP.76-77.101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work shows an analysis of interconnect cleaning after SiN etching step for low-k / copper integration. Analytical data from ToF-SIMS, AES and FiB-TEM are combined to understand the mechanism and efficacy of available cleaning chemistries in the presence of Cu and organic (SiLK) or Si-based (Silane oxide) dielectric materials. the use of two different solutions, working on two different approaches (low and high pH), is evaluated: diluted HF and commercially available EKC525.

引用

页码：101 / 104

页数：4