Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

被引：56

作者：

Ng, CH ^{[1
]}

Chew, KW ^{[1
]}

Chu, SF ^{[1
]}

机构：

[1] Chartered Semicond Mfg Ltd, Technol Dev Dept, Mixed Signal Grp, Singapore 738406, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 08期

关键词：

breakdown field strength; dielectric constant; MIM capacitor; nondispersive; quality factor; RF; silicon nitride; silicon oxynitride; temperature coefficient of capacitance; voltage coefficient of capacitance;

D O I：

10.1109/LED.2003.815154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the electrical characteristic,and the comparison. of the metaL-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.

引用

页码：506 / 508

页数：3

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