40 Gbit/s silicon optical modulator for high-speed applications

被引：258

作者：

Liao, L. ^{[1
]}

Liu, A. ^{[1
]}

Rubin, D. ^{[2
]}

Basak, J. ^{[1
]}

Chetrit, Y. ^{[2
]}

Nguyen, H. ^{[1
]}

Cohen, R. ^{[2
]}

Izhaky, N. ^{[2
]}

Paniccia, M. ^{[1
]}

机构：

[1] Intel Corp, Santa Clara, CA 95054 USA

[2] Intel Corp, IL-91031 Jerusalem, Israel

来源：

ELECTRONICS LETTERS | 2009年

关键词：

Number:; 224312; Acronym:; FP7; Sponsor: Seventh Framework Programme;

D O I：

10.1049/el:20072253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed silicon optical modulator based on the free carrier plasma dispersion effect is presented. It is based oil carrier depiction of a pn diode embedded inside a silicon-on-insulator waveguide. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of the electrical and optical signals along the length of the device. The resulting modulator has a 3 dB bandwidth of similar to 30 GHz and can transmit data up to 40 Gbit/s.

引用

页码：51 / 52

页数：2

共 5 条

[1] High speed silicon Mach-Zehnder modulator [J].