Full wafer particle defect characterization

被引：0
|
作者：
Brundle, CR [1 ]
Uritsky, YS [1 ]
机构：
[1] Appl Mat Inc, Defect & Thin Films Characterizat Lab, Santa Clara, CA 95054 USA
来源：
CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2000, INTERNATIONAL CONFERENCE | 2001年 / 550卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The capabilities available for particle defect characterization on 200mm and 300mm wafers are discussed in relation to the original detection procedure light scattering) and the ITRS requirements. A number of advanced characterization techniques (SEM/EDX, FIB, SAM, TOF-SIMS, Optical/Raman, AFM) are available in 300mm configuration suitable for off-line characterization. Examples of use are presented. For online particle characterization (i.e. in the fab) only SEM/EDX has approached the stage of robustness, automation, and expert-free use needed for incorporation. It is beginning to replace optical as the particle review method.
引用
收藏
页码：285 / 291
页数：3
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