Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates

被引:54
作者
Birkhahn, R [1 ]
Steckl, AJ [1 ]
机构
[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA
关键词
D O I
10.1063/1.122404
中图分类号
O59 [应用物理学];
学科分类号
摘要
Visible light emission has been obtained from Er-doped alpha-GaN thin films grown on Si(111). The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N-2. Photoexcitation with a He-Cd laser resulted in strong green emission from two narrow green lines at 537 and 558 nm identified as Er transitions from the H-2(11/2) and S-4(3/2) levels to the I-4(15/2) ground state. X-ray diffraction shows the GaN:Er to be a wurtzitic single crystal film. The growth temperature is seen to have a strong effect on the GaN:Er surface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02641-2].
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收藏
页码:2143 / 2145
页数:3
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