Tuning of the electronic and optical properties of single-layer indium nitride by strain and stress

Using first principles calculations, electronic and optical properties of indium nitride graphene-like structure have been studied under various stress and strain values. The results exhibit that this compound in the range of +/- 6 applied biaxial strain remains a direct band gap semiconductor. Also, exerting stress and strain reduces the energy band gap of the considered materials. The optical calculations illustrate that applying stress and strain on system results in blue and red shift in optical spectra. All obtained results presented that we can tune the optoelectronic properties of indium nitride by applying stress and strain. (C) 2016 Elsevier B.V. All rights reserved.