Comprehensive Study of Thermal Impact on Warpage Behaviour of FOWLP with Different Die to Mold Ratio

被引:6
作者
Chong, Ser Choong [1 ]
Lim, Simon Siak Boon [1 ]
Seit, Wen Wei [1 ]
Chai, Tai Chong [1 ]
Sanchez, Debbie Claire [2 ]
机构
[1] ASTAR, Inst Microelect, 2 Fusionopolis Way,08-02 Innovis Tower, Singapore 138634, Singapore
[2] ERS Elect GmbH, 2 Fusionopolis Way,08-02 Innovis Tower, Singapore 138634, Singapore
来源
IEEE 71ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2021) | 2021年
关键词
Fan-out wafer level package (FOWLP); Warpage; Die to Mold Ratio; Mold 1st process;
D O I
10.1109/ECTC32696.2021.00177
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the challenges in processing Fan Out Wafer Level Package is the warpage of the Molded Wafer. Some of the fabrication processes such as lithography, coating, etching, and plating could not process wafer with high warpage. Therefore, the molded wafer should have as low a warpage magnitude as possible. In this paper, we study the warpage behavior of the molded wafer with different die to mold ratio. Further work is done on evaluating the impact of different chuck temperatures during the debonding process for the wafer with the highest warpage. The debonding process involved removing the molded wafer from the metal carriers, removing the thermal release tape from the molded wafer, and subjecting the molded wafer to series of thermal treatments to reduce the final warpage of the molded wafer.
引用
收藏
页码:1082 / 1087
页数:6
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