40Gbit/s n-i-n InP Mach-Zehnder modulator with a π voltage of 2.2 V

被引：43

作者：

Tsuzuki, K

Ishibashi, T

Ito, T

Oku, S

Shibata, Y

Iga, R

Kondo, Y

Tohmori, Y

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Elect Corp, Tokyo, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 20期

关键词：

Optical saturation;

D O I：

10.1049/el:20030939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using an n-i-n heterostructure, a travelling-wave Mach-Zehnder modulator on an InP substrate has been developed. An extremely small pi voltage (V-pi) of 2.2 V has been obtained, even for a short signal-electrode length of 3 mm. Wavelength-insensitive extinction characteristics and 40 Gbit/s operation are described.

引用

收藏

页码：1464 / 1466

页数：3

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