Interdiffusion studies in bulk Au-Ti system

被引:7
作者
Kumar, A. K. [1 ,2 ]
Paul, A. [1 ,2 ]
机构
[1] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Ctr Elect Design & Technol, Bangalore 560012, Karnataka, India
关键词
OHMIC CONTACTS; ELECTRICAL-PROPERTIES; PHASE-FORMATION; DIFFUSION;
D O I
10.1007/s10854-009-0047-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of the contacts, where Au/Ti layers are used in the metallization scheme, largely depends on the product phases grown by interdiffusion at the interface. It is found that four intermetallic compounds grow with narrow homogeneity range and wavy interfaces in the interdiffusion zone. The presence of wavy interfaces is the indication of high anisotropy in diffusion of the product phases. This also reflects in the deviation of parabolic growth from the average. Further, we have determined the relevant diffusion parameters, such as interdiffusion coefficient in the penetrated region of the end members and integrated diffusion coefficients of the intermetallic compounds.
引用
收藏
页码:1202 / 1206
页数:5
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