Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector

被引:4
作者
Song, Jiaxun [1 ]
Shu, Kaixiang [2 ]
Wang, Jialin [1 ]
Wang, Xingfu [2 ]
Huo, Nengjie [2 ]
Notzel, Richard [1 ]
机构
[1] South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China
[2] South China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R China
关键词
1/f redox noise; core-shell; Cu2O; faradaic interface; InGaN; nanowires;
D O I
10.1109/TED.2022.3206181
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The low-frequency photocurrent noise power densityS(I) of a self-powered photoelectrochemicalphotode3 tector (PEC PD) based on InGaN/Cu2O core-shell nanowire p-n junctions follows a 1/f(beta) frequency dependence. The exponent beta increases from 1.5 to about 2 with increase of the photocurrent density I-p. S-I strongly deviates from the standard quadratic I-p dependence with an exponent of 1.6. The noise behavior of the dark current density driven by an external voltage is very similar. beta distinctly depends on the NaI electrolyte concentration. Hence, the physical origin of the low-frequency 1/ f(beta) noise is the redox noise generated by the Faradaic charge transfer at the electrode-electrolyte interface. The redox noise dominates the total noise of the PEC PD.
引用
收藏
页码:6184 / 6187
页数:4
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