Microwave atomic force microscopy imaging for nanometer-scale electrical property characterization

被引:31
|
作者
Zhang, Lan [1 ]
Ju, Yang [1 ]
Hosoi, Atsushi [1 ]
Fujimoto, Akifumi [1 ]
机构
[1] Nagoya Univ, Dept Mech Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 2010年 / 81卷 / 12期
基金
日本学术振兴会;
关键词
CONTACTLESS MEASUREMENT; MILLIMETER-WAVES; AFM; CONDUCTIVITY; PROBES; FABRICATION; CHARGE; FILMS; TIPS;
D O I
10.1063/1.3525058
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We introduce a new type of microscopy which is capable of investigating surface topography and electrical property of conductive and dielectric materials simultaneously on a nanometer scale. The microwave atomic force microscopy is a combination of the principles of the scanning probe microscope and the microwave-measurement technique. As a result, under the noncontact AFM working conditions, we successfully generated a microwave image of a 200-nm Au film coating on a glass wafer substrate with a spatial resolution of 120 nm and a measured voltage difference of 19.2 mV between the two materials. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525058]
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页数:4
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