Localized emission from defects in MoSe2 layers

被引:59
作者
Chakraborty, Chitraleema [1 ]
Goodfellow, Kenneth M. [2 ]
Vamivakas, A. Nick [1 ,2 ,3 ]
机构
[1] Univ Rochester, Mat Sci, 601 Elmwood Ave, Rochester, NY 14627 USA
[2] Univ Rochester, Inst Opt, Rochester, NY 14627 USA
[3] Univ Rochester, Ctr Coherence & Quantum Opt, 601 Elmwood Ave, Rochester, NY 14627 USA
基金
美国国家科学基金会;
关键词
SINGLE-PHOTON EMISSION; QUANTUM EMITTERS; PHOTOLUMINESCENCE; EXCITONS; DOTS;
D O I
10.1364/OME.6.002081
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional semiconducting analogues of graphene, like monolayer molybdenum diselenide (MoSe2), provide a rich platform for optoelectronics. We study sharp localized photoluminescence (PL) emission from exfoliated MoSe2 flakes. These emission signatures are present in single layers as well as bi-and few layer flakes at low temperatures. The PL from these defects saturate at a lower power than the neutral and charged excitons of the monolayer MoSe2 and are stable against multiple heating and cooling cycles. We study the Zeeman effect in these emitters through magneto-optical photoluminescence studies and derive a g-factor of around 4 which is similar to the delocalized excitons in MoSe2. (C) 2016 Optical Society of America
引用
收藏
页码:2081 / 2087
页数:7
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