Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

被引：272

作者：

Scanlon, D. O. ^{[1
]}

King, P. D. C. ^{[2
]}

Singh, R. P. ^{[3
]}

de la Torre, A. ^{[2
]}

Walker, S. McKeown ^{[2
]}

Balakrishnan, G. ^{[3
]}

Baumberger, F. ^{[2
]}

Catlow, C. R. A. ^{[1
]}

机构：

[1] UCL, Dept Chem, London WC1H 0AJ, England

[2] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

topological insulators; bulk conductivity; defects; density-functional theory; ARPES; SINGLE DIRAC CONE; DOPING LIMITS; BI2TE3; SB2TE3;

D O I：

10.1002/adma.201200187

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Intrinsic topological insulators are realized by alloying Bi 2Te 3 with Bi 2Se 3. Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

收藏

页码：2154 / 2158

页数：5

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