Vertical nanowire III-V MOSFETs with improved high-frequency gain

被引：13

作者：

Kilpi, O. -P. ^{[1
]}

Hellenbrand, M. ^{[1
]}

Svensson, J. ^{[1
]}

Lind, E. ^{[1
]}

Wernersson, L. -E. ^{[1
]}

机构：

[1] Lund Univ, Dept Elect & Informat Technol, Box 118, S-22100 Lund, Sweden

来源：

ELECTRONICS LETTERS | 2020年 / 56卷 / 13期

基金：

欧盟地平线“2020”; 瑞典研究理事会;

关键词：

gallium arsenide; III-V semiconductors; indium compounds; nanowires; MOSFET; nanoelectronics; semiconductor heterojunctions; semiconductor quantum wires; vertical nanowire III-V MOSFET; improved high-frequency gain; high-frequency performance; gate-last configuration; device architecture; power gain; asymmetric capacitances; vertical heterostructure nanowire MOSFET; size; 120; 0; nm; frequency; GHz; 130; 20; gain; 14; 4; dB; Si; InAs-InGaAs; TRANSCONDUCTANCE;

D O I：

10.1049/el.2020.0266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device withL(g)= 120 nm demonstratesf(T)= 120 GHz,f(max)= 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.

引用

页码：669 / 671

页数：3

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