Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures

Strain distributions within a silicon-on-insulator (SOI) layer induced by overlying compressively stressed Si(3)N(4) features were measured using x-ray microbeam diffraction. A comparison of analytical and numerical mechanical models of the depth-averaged strain distributions to the measured strain profiles in the SOI layer indicated a blanket film stress of -2.5 GPa in the Si(3)N(4) features. A two-dimensional boundary element model, implemented to analyze thin film/substrate systems, reproduced the observed strain distributions better than an edge-force formulation due to the incorporation of loading along the Si(3)N(4)/Si interface. (c) 2008 American Institute of Physics.