CdTe(111)B grown on Si(111) by molecular beam epitaxy

被引：24
|
作者：
Rujirawat, S [1 ]
Xin, Y
Browning, ND
Sivananthan, S
Smith, DJ
Tsen, SCY
Chen, YP
Nathan, V
机构：
[1] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[4] EPIR Ltd, Lisle, IL 60532 USA
[5] USAF, Res Lab VSSS, Kirtland AFB, NM 87117 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期
关键词：
D O I：
10.1063/1.123846
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the growth of large-area, domain-free CdTe(111) single crystals on As-passivated Si(111) substrates by molecular beam epitaxy using ZnTe buffer layers. The crystal quality of the CdTe(111)B/ZnTe(111)B/Si(111) films was examined by x-ray diffraction (56 arcs), etch-pit-density (2 x 10(5) cm(-2)) analysis, and transmission electron microscopy, and was found to be comparable to or better than the best CdTe(111)B films grown directly on vicinal Si(001). Surface reconstructions were observed by reflection high-energy electron diffraction at different stages. Diffraction intensity oscillations demonstrated the layer-by-layer growth mode of the CdTe surface. An interface model for these films is proposed. (C) 1999 American Institute of Physics. [S0003-6951(99)02916-2].
引用
收藏
页码：2346 / 2348
页数：3
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