Experimental surface-state band structure of the Ba-induced Si(111) 3X1 surface

被引:28
作者
Okuda, T
Ashima, H
Takeda, H
An, KS
Harasawa, A
Kinoshita, T
机构
[1] Univ Tokyo, Inst Solid State Phys, Synchrotron Radiat Lab, Kashiwa, Chiba 2778581, Japan
[2] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan
[3] Korea Res Inst Chem Technol, Thin Film Mat Lab, Taejon 305600, South Korea
关键词
D O I
10.1103/PhysRevB.64.165312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface-state band structure of the Ba-induced single-domain Si(111) 3 x 1 surface was studied in detail via angle-resolved photoelectron spectroscopy using synchrotron radiation. Applying different photon energies and experimental geometries, we obtained the experimental surface-state band structure, including information of the symmetry of the surface states. Our results indicate that the surface electronic state is undoubtedly semiconducting, in contrast to the prediction of previous band calculations. However, the dispersion feature of the three nonmetallic surface states is in almost perfect agreement with that calculated for the honeycomb-chained channel model. The inconsistency between our results and the theoretical calculation can be explained by the fact that the coverage of alkali-earth metal is not the same as that of alkali metal. Rather, the coverage of alkali-earth metal on the 3 x 1 surface is half that of alkali metal, i.e., 1/6 monolayer.
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页数:7
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