Synthesis of superconducting Bi2Sr2CaCu2O8+d single crystals using alumina crucibles with different purities

被引:3
作者
Ishida, Hiroki [1 ]
Kato, Takahiro [2 ]
Takasaki, Masashi [3 ]
Hamasaki, Katsuyoshi [2 ]
机构
[1] Toyama Natl Coll Technol, Dept Elect & Comp Engn, Imizu, Toyama 9330293, Japan
[2] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan
[3] Toyama Natl Coll Technol, Tech Support Ctr, Imizu, Toyama 9330293, Japan
基金
日本学术振兴会;
关键词
Bi-2212 single crystal; self-flux method; intrinsic Josephson junction; INTRINSIC JOSEPHSON-JUNCTIONS; VERTICAL BRIDGMAN METHOD; TC OXIDE SUPERCONDUCTOR; CU-O SYSTEM; GROWTH; FABRICATION; FLUX; KCL;
D O I
10.1002/tee.21722
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A self-flux method is the simplest technique for synthesizing Bi2Sr2CaCu2O8+d (Bi-2212) superconducting single crystals. However, the crystals are inevitably contaminated because of the Bi-2212 stoichiometric melt reacting with the crucible material. In this paper, we investigate the nonsuperconducting subproduct that forms during heating in the self-flux method for synthesizing Bi-2212. This subproduct was identified as BiSr2CaAl3O9 by X-ray diffraction. Bi-2212 crystal growth was performed using A12O3 crucibles with three different purities (nominally 97, 99.7, and 99.9%). For both the 97 and 99.7% purity crucibles, the subproduct was observed in all five samples out of five, whereas for the 99.9% purity crucible, it was observed in only two samples out of five. Furthermore, the 99.9% purity crucible gave a much lower subproduct volume than the 97% purity crucible. The average superconducting critical temperature (Tc,zero) varied depending on the crucible purity; it was 89.6, 90.8, and 91.8 K for the 97, 99.7, and 99.9% purity crucibles, respectively. Finally, we fabricated Bi-2212 stacked devices with intrinsic Josephson junctions (Bi-2212 stack) using as-grown crystals from the 97 and 99.9% purity crucibles. The Bi-2212 stacks exhibited a highly hysteretic currentvoltage characteristic even at liquid N2 temperature and they had identical quality parameters for Josephson junctions (i.e., Ir/Ic and voltage jump Vj). We conclude that the subproduct formation has little effect on the electrical characteristics of a Josephson junction device at 77 K. (C) 2012 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
引用
收藏
页码:229 / 233
页数:5
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