Visible-light-emitting layered BC2N semiconductor

被引：173

作者：

Watanabe, MO

Itoh, S

Sasaki, T

Mizushima, K

机构：

[1] TOSHIBA CO LTD,ADV RES LAB,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

[2] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.77.187

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have examined the band gap of a layered BC2N compound semiconductor. The spectroscopic measurements of scanning tunneling microscopy showed the characteristics of a semiconductor with a band gap energy of 2 eV. The valence band edge measured by x-ray photoelectron spectroscopy was 0.95 eV below the Fermi level. Photoluminescence spectra showed a peak at 2.1 eV at room temperature and 4.2 K. These results were compared with the calculated band structures, and good agreement was obtained. It was concluded that the BC2N is a semiconductor with a direct band gap which emits visible light.

引用

收藏

页码：187 / 189

页数：3

相关论文

共 22 条

[11] C-60 - BUCKMINSTERFULLERENE [J].

KROTO, HW ;

HEATH, JR ;

OBRIEN, SC ;

CURL, RF ;

SMALLEY, RE .

NATURE, 1985, 318 (6042) :162-163

[12] SCANNING TUNNELING MICROSCOPE INSTRUMENTATION [J].

KUK, Y ;

SILVERMAN, PJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (02) :165-180

[13] ATOMIC ARRANGEMENT AND ELECTRONIC-STRUCTURE OF BC2N [J].

LIU, AY ;

WENTZCOVITCH, RM ;

COHEN, ML .

PHYSICAL REVIEW B, 1989, 39 (03) :1760-1765

[14] PREDICTION OF NEW LOW COMPRESSIBILITY SOLIDS [J].

LIU, AY ;

COHEN, ML .

SCIENCE, 1989, 245 (4920) :841-842

[15] AMINOBORANE POLYMERS AS PRECURSORS OF C-N-B CERAMIC MATERIALS [J].

MAYA, L .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1988, 71 (12) :1104-1107

[16] CHIRAL TUBULES OF HEXAGONAL BC2N [J].

MIYAMOTO, Y ;

RUBIO, A ;

COHEN, ML ;

LOUIE, SG .

PHYSICAL REVIEW B, 1994, 50 (07) :4976-4979

[17] SIMULTANEOUS CRYSTALLIZATION OF DIAMOND AND CUBIC BORON-NITRIDE FROM THE GRAPHITE RELATIVE BC2N UNDER HIGH-PRESSURE HIGH-TEMPERATURE CONDITIONS [J].

SASAKI, T ;

AKAISHI, M ;

YAMAOKA, S ;

FUJIKI, Y ;

OIKAWA, T .

CHEMISTRY OF MATERIALS, 1993, 5 (05) :695-699

[18] ELECTRONIC-STRUCTURE OF THE SI(111)2X1 SURFACE BY SCANNING-TUNNELING MICROSCOPY [J].

STROSCIO, JA ;

FEENSTRA, RM ;

FEIN, AP .

PHYSICAL REVIEW LETTERS, 1986, 57 (20) :2579-2582

[19] Bonding characterization of BC2N thin films [J].

Watanabe, MO ;

Itoh, S ;

Mizushima, K ;

Sasaki, T .

APPLIED PHYSICS LETTERS, 1996, 68 (21) :2962-2964

[20] ELECTRICAL-PROPERTIES OF BC2N THIN-FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION [J].

WATANABE, MO ;

ITOH, S ;

MIZUSHIMA, K ;

SASAKI, T .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2880-2882