Gap-state spectroscopy in amorphous selenium

被引:0
作者
Benkhedir, ML
Brinza, M
Willekens, J
Haenen, K
Daenen, M
Nesladek, M
Adriaenssens, GJ
机构
[1] Katholieke Univ Leuven, B-3001 Louvain, Belgium
[2] Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 05期
关键词
amorphous selenium; gap states; photoconductivity; photothermal deflection spectroscopy;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
possible to locate several of the energy levels of the charged coordination defects (D+ and D-) that constitute the chalcogenide negative-U model in the amorphous selenium bandgap. However it has also been observed that the energy position of those levels is influenced by external influences such as light soaking or annealing of the samples. The post-transit time-of-flight photocurrents that reveal those energy positions have, therefore, been systematically studied in samples with different pre-histories. The optical absorption in the samples was further examined through the constant-photocurrent method (CPM), and by photothermal deflection spectroscopy (PDS). Although the TOF results provide information on the D+ and D- levels separately, while the CPM and PDS data reflect the integral optical absorption between both centres and the bands, the results do agree. The photo-induced changes that are observed are stable at room temperature.
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页码:2223 / 2230
页数:8
相关论文
共 13 条
[1]   DISTRIBUTION OF GAP STATES IN A-AS2SE3 [J].
ADRIAENSSENS, GJ .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (01) :79-87
[2]  
[Anonymous], 2003, AMORPHOUS SEMICONDUC
[3]  
Benkhedir ML, 2005, J OPTOELECTRON ADV M, V7, P329
[4]   Electronic density of states in amorphous selenium [J].
Benkhedir, ML ;
Brinza, M ;
Adriaenssens, GJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (44) :S5253-S5264
[5]   Defect levels in the band gap of amorphous selenium [J].
Benkhedir, ML ;
Aida, MS ;
Adriaenssens, GJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 344 (03) :193-198
[6]   PHOTOINDUCED DEFECTS IN CHALCOGENIDE GLASSES [J].
BIEGELSEN, DK ;
STREET, RA .
PHYSICAL REVIEW LETTERS, 1980, 44 (12) :803-806
[7]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[8]  
Kocka J., 1988, AMORPHOUS SILICON RE, P297
[9]   Negative correlation energy and valence alternation in amorphous selenium: An in situ optically induced ESR study [J].
Kolobov, AV ;
Kondo, M ;
Oyanagi, H ;
Matsuda, A ;
Tanaka, K .
PHYSICAL REVIEW B, 1998, 58 (18) :12004-12010
[10]   The interaction of holes with the gap states of a-As2Se3 in annealed and light exposed states [J].
Kounavis, P .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 326 :98-102