Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN

被引：6

作者：

Perez-Tomas, A. ^{[1
]}

Placidi, M. ^{[1
]}

Fontsere, A. ^{[1
]}

Gammon, P. M. ^{[2
]}

Jennings, M. R. ^{[2
]}

机构：

[1] IMB CNM CSIC, Bellaterra 08193, Catalunya, Spain

[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 08期

关键词：

CAP LAYER; RESISTANCE; ACTIVATION; LOGIC;

D O I：

10.1016/j.microrel.2011.03.023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behavior of an ohmic contact to an implanted Si GaN n-well in the temperature range of 25-300 degrees C has been investigated. This is the sort of contact one would expect in many GaN based devices such as (source/drain) in a metal-oxide-semiconductor transistor. A low resistivity ohmic contact was achieved using the metal combination of Ti (350 angstrom)/Al (1150 angstrom) on a protected (SiO2 cap) and unprotected samples during the post implantation annealing. Sheet resistance of the implanted layer and metal-semiconductor contact resistance to N+ GaN have been extracted at different temperatures. Both, the experimental sheet resistance and the contact resistance decrease with the temperature and their characteristics are fitted by means of physical based models. (C) 2011 Elsevier Ltd. All rights reserved.

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收藏

页码：1325 / 1329

页数：5

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