Surface reconstructions of InGaAs alloys

被引：36

作者：

Millunchick, JM

Riposan, A

Dall, B

Pearson, C

Orr, BG

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Comp Sci Engn Sci & Phys, Flint, MI 48502 USA

[3] Univ Michigan, Harrison M Randall Lab, Dept Phys, Ann Arbor, MI 48109 USA

[4] Univ Michigan, Harrison M Randall Lab, Appl Phys Program, Ann Arbor, MI 48109 USA

来源：

SURFACE SCIENCE | 2004年 / 550卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

molecular beam epitaxy; scanning tunneling microscopy; surface relaxation and reconstruction; gallium arsenide; indium arsenide;

D O I：

10.1016/j.susc.2004.01.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The atomic surface structures of InGaAs lattice-matched and 1.9% compressively strained alloys were examined using in situ scanning tunneling microscopy. The surface of the lattice-matched films is comprised of an anion-rich but mixed-termination (4x3) or (6x4) reconstruction. The strained alloys exhibit regions of the same reconstructions, in addition to pockets of alpha2(2x4) in the case of the In0.27Ga0.73As/GaAs films, and beta2(2x4) in the case of the In0.81Ga0.19As/InP. Annealing experiments show that the coverage of the alpha2(2 x 4) and beta2(2 x 4) regions decreases with increasing annealing time. Therefore, it is postulated that the composition of these (2 x 4) reconstructions is enriched in In compared to the (4 x 3)/(6 x 4). (C) 2004 Published by Elsevier B.V.

引用

页码：1 / 7

页数：7

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