Crystal growth of GaPO4, a very promising material for manufacturing BAW devices

被引：17
作者：
Cambon, O
Yot, P
Balitsky, D
Goiffon, A
Philippot, E
Capelle, B
Detaint, J
机构：
[1] Univ Montpellier 2, LPMC, CNRS, UMR 5617, F-34095 Montpellier 5, France
[2] LPMC, F-75252 Paris, France
[3] Univ Paris Sud, LURE, F-91405 Orsay, France
来源：
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 2001年 / 26卷 / 01期
关键词：
D O I：
10.1016/S0151-9107(01)90016-9
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
GaPO4 crystals were obtained by hydrothermal solution crystal growth. The retrograd solubility of the material was investigated in different solvents. In static growth vessels, good quality crystals can be obtained only if the solute supply is higher than about 0.06M/L. Crystal characterization by infrared spectroscopy showed that dilute solvents at high temperature decrease the "-OH"group content. Seed lengthening by splicing along the Y-axis was designed. The AT cut angle and the C-44 elastic constant were determined. Compared to quartz-type materials, the C-0/C-1 calculation shows the high ability of GaPO4 for manufacturing BAW devices.
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页码：79 / 84
页数：6
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