Recent developments in high-power, short-wave mid-infrared semiconductor disk lasers

被引:6
作者
Burns, D. [1 ]
Hopkins, J-M. [1 ]
Kemp, A. J. [1 ]
Roesener, B. [2 ]
Schulz, N. [2 ]
Manz, C. [2 ]
Koehler, K. [2 ]
Rattunde, M. [2 ]
Wagner, J. [2 ]
机构
[1] Univ Strathclyde, Inst Photon, 106 Rottenrow, Glasgow G4 0NW, Lanark, Scotland
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源
SOLID STATE LASERS XVIII: TECHNOLOGY AND DEVICES | 2009年 / 7193卷
基金
英国工程与自然科学研究理事会;
关键词
Laser; diode-pumped; mid-IR; semiconductor laser; SURFACE-EMITTING LASERS; THERMAL MANAGEMENT; SINGLE-FREQUENCY; OPERATION; DESIGN;
D O I
10.1117/12.811977
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5 mu m - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.X mu m mid-infrared spectral region continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, single-frequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.
引用
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页数:13
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