High-performance broadband photodetector based on PdSe2/black phosphorus heterodiode

被引：21

作者：

Dong, Qingsong ^{[1
]}

Wang, Fang ^{[2
]}

Hu, Xin ^{[1
]}

Lu, Yuan ^{[3
]}

Zhao, Dongxu ^{[4
]}

Zhang, Min ^{[5
]}

Han, Tao ^{[1
]}

Hou, Xingyuan ^{[1
]}

Wang, Shaoliang ^{[1
]}

Long, Mingsheng ^{[1
]}

Shan, Lei ^{[1
]}

机构：

[1] Anhui Univ, Inst Phys Scienceand Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Key Lab Struct & Funct Regulat Hybrid Mat,Minist E, 111 Jiu Long Rd, Hefei 230601, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China

[3] NUDT, State Key Lab Pulsed Power Laser Technol, Infrared & Low Temp Plasma Key Lab Anhui Prov, 460 Huangshan Rd, Hefei 230037, Peoples R China

[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dongnanhu Rd, Changchun 130033, Peoples R China

[5] Jiaxing Univ, Coll Data Sci, 899 Guangqiong Rd, Jiaxing 314001, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 23期

基金：

中国国家自然科学基金;

关键词：

BLACK PHOSPHORUS;

D O I：

10.1063/5.0097044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uncooled long-wavelength infrared photodetectors based on two-dimensional materials have wide applications, such as remote sensing, missile guide, imaging, and night vision. However, realizing high-performance photodetectors based on 2D materials with high photoresponsivity and fast response speed is still a challenge. Here, we report an ultra-broadband photodetector based on the PdSe2/BP van der Waals heterodiode with a fast response speed. The detection range of the PdSe2/BP heterodiode is covered from visible to long-wave infrared (0.4-10.6 mu m). A high photoresponsivity of 116.0 A/W and a low noise equivalence power of 8.4 x 10(-16) W/Hz(1/2) and D* of 2.05 x 10(9) cm Hz(1/2)/W were demonstrated. Notably, the heterodiode exhibits a very fast response speed with tau(r) = 2.9 and tau(d) = 4.0 mu s. Our results introduced a promising application in broadband and fast photoresponse at weak light intensity.

引用

页数：6

共 41 条

[1] Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2 [J].