Practical Design and Implementation Procedure of an Interleaved Boost Converter Using SiC Diodes for PV Applications

被引：94

作者：

Ho, Carl Ngai-Man ^{[1
]}

Breuninger, Hannes ^{[1
]}

Pettersson, Sami ^{[1
]}

Escobar, Gerardo ^{[1
]}

Serpa, Leonardo Augusto ^{[1
]}

Coccia, Antonio ^{[1
]}

机构：

[1] ABB Switzerland Ltd, Corp Res, CH-5405 Baden, Switzerland

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2012年 / 27卷 / 06期

关键词：

Diode; interleaved boost converter (IBC); MOS-FET; power semiconductor; photovoltaic (PV); silicon carbide (SiC); POWER DEVICES; PERFORMANCE; SYSTEM; MODULE; MOSFET;

D O I：

10.1109/TPEL.2011.2178269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The implementation of an interleaved boost converter (IBC) using SiC diodes for photovoltaic (PV) applications is presented in this paper. The converter consists of two switching cells sharing the PV panel output current. Their switching patterns are synchronized with 180 degrees phase shift. Each switching cell has a SiC Schottky diode and a CoolMOS switching device. The SiC diodes provide zero reverse-recovery current ideally, which reduces the commutation losses of the switches. Such an advantage from the SiC diodes enables higher efficiency and higher power density of the converter system by reducing the requirement of the cooling system. This paper presents also an optimization study of the size and efficiency of the IBC. Based on 1) the steady-state characteristic of the topology; 2) the static and dynamic characteristics of the switching cells; 3) the loss model of the magnetic components; and 4) the cooling system design, the paper provides a set of design criteria, procedures, and experimental results for a 2.5 kW IBC prototype using SiC diodes.

引用

页码：2835 / 2845

页数：11

共 24 条

[1] High-Performance Adaptive Perturb and Observe MPPT Technique for Photovoltaic-Based Microgrids [J].

Abdelsalam, Ahmed K. ;

Massoud, Ahmed M. ;

Ahmed, Shehab ;

Enjeti, Prasad N. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2011, 26 (04) :1010-1021

[2] A 1-MHz hard-switched silicon carbide DC-DC converter [J].

Abou-Alfotouh, Ahmed M. ;

Radun, Arthur V. ;

Chang, Hsueh-Rong ;

Winterhalter, Craig .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2006, 21 (04) :880-889

[3]

[Anonymous], POW FACT CORR IND DE

[4] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[5]

DeCristofaro N, 1998, MRS BULL, V23, P50, DOI 10.1557/S0883769400030451

[6] A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications [J].

Elasser, A ;

Kheraluwala, MH ;

Ghezzo, M ;

Steigerwald, RL ;

Evers, NA ;

Kretchmer, J ;

Chow, TP .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2003, 39 (04) :915-921

[7] A Novel PV Microinverter With Coupled Inductors and Double-Boost Topology [J].

Fang, Yu ;

Ma, Xudong .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2010, 25 (12) :3139-3147

[8] Airgap fringing flux reduction in inductors using open-circuit copper screens [J].

Fletcher, J ;

Williams, B ;

Mahmoud, M .

IEE PROCEEDINGS-ELECTRIC POWER APPLICATIONS, 2005, 152 (04) :990-996

[9] Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power-factor correction [J].

Hernando, MM ;

Fernández, A ;

García, J ;

Lamar, DG ;

Rascón, M .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2006, 53 (02) :705-707

[10]

Ho C.N.M., 2008, IEEE Industry Applications Society Annual Meeting, IAS '08, P1

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