Tunable Bulk Acoustic Wave Resonators Based on Ba0.25Sr0.75TiO3 Thin Films and a HfO2/SiO2 Bragg Reflector

被引：20

作者：

Berge, John ^{[1
]}

Gevorgian, Spartak ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2011年 / 58卷 / 12期

基金：

瑞典研究理事会;

关键词：

D O I：

10.1109/TUFFC.2011.2142

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

A switchable and tunable bulk acoustic wave resonator based on a paraelectric phase Ba0.25Sr0.75TiO3 thin film and an all-dielectric HfO2/SiO2 Bragg reflector is presented. The achieved tuning range (3.8%) and effective electromechanical coupling coefficient (7.1%) are the highest reported for solidly mounted tunable bulk acoustic wave resonators. The non-conductive Bragg reflector stack provides excellent integration possibilities.

引用

页码：2768 / 2771

页数：4

共 18 条

[1] The effect of Bragg reflectors on the electromechanical performance of parallel-plate ferroelectric capacitors [J].

Berge, J. ;

Norling, M. ;

Vorobiev, A. ;

Gevorgian, S. .

FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING), 2010, 8

[2] Tunable solidly mounted thin film bulk acoustic resonators based on BaxSr1-xTiO3 films [J].

Berge, John ;

Vorobiev, Andrei ;

Steichen, William ;

Gevorgian, Spartak .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (09) :655-657

[3] Field and temperature dependent parameters of the dc field induced resonances in BaxSr1-xTiO3-based tunable thin film bulk acoustic resonators [J].

Berge, John ;

Norling, Martin ;

Vorobiev, Andrei ;

Gevorgian, Spartak .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)

[4] Characterization of sol-gel Pb(Zr0.53Ti0.47)O3 in thin film bulk acoustic resonators [J].

Conde, Janine ;

Muralt, Paul .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2008, 55 (06) :1373-1379

[5]

Deleniv A, 2007, IEEE MTT S INT MICR, P682

[6] Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].

Dietz, GW ;

Schumacher, M ;

Waser, R ;

Streiffer, SK ;

Basceri, C ;

Kingon, AI .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364

[7]

Dubois MA, 1999, ULTRASON, P907, DOI 10.1109/ULTSYM.1999.849136

[8] BAW Resonator Design Considerations - An Overview [J].

Fattinger, Gernot G. .

2008 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM, VOLS 1 AND 2, 2008, :762-767

[9]

Gevorgian S., 2008, US Patent, Patent No. [2008/0055023 A1, 20080055023]

[10]

Gevorgian S., 2006, Patent No. [WO 2006/004470 A1, 2006004470]

← 1 2 →