Defect generation by hole injection in hydrogenated amorphous silicon

被引:0
|
作者
Kim, C
Lee, C
Shin, SC
机构
[1] Department of Physics, Korea Adv. Inst. Sci. and Technol., Yusong-gu, Taejon 305-701
关键词
semiconductors; thin films; electronic states (localized);
D O I
10.1016/0038-1098(96)00427-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Metastable defects generated by hole injection under the constant current condition are studied above room temperature. Defect saturation behavior is observed after sufficient period of current soaking, which is faster at higher temperatures. The saturated defect density ij obtained from the space charge limited current. We propose a simple model for the defect kinetics in which hole induced defect creation and annihilation as well as thermal annealing processes are considered. This model includes dispersive hydrogen diffusion and fits well with the present experimental data. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码:377 / 380
页数:4
相关论文
共 50 条
  • [21] A COMMENT ON THERMAL DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON
    STUTZMANN, M
    PHILOSOPHICAL MAGAZINE LETTERS, 1992, 66 (03) : 147 - 150
  • [22] Analysis of lifetime distribution of defect luminescence in hydrogenated amorphous silicon
    Ogihara, C.
    Yu, X.
    Morigaki, K.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2121 - 2125
  • [23] Photoinduced structural change and defect creation in hydrogenated amorphous silicon
    Shimizu, K
    Tabuchi, T
    Iida, M
    Okamoto, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 267 - 271
  • [24] DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON
    GANGULY, G
    MATSUDA, A
    PHYSICAL REVIEW B, 1993, 47 (07) : 3661 - 3670
  • [25] DEFECT KINETICS IN HYDROGENATED AMORPHOUS-SILICON MIS STRUCTURES
    JACKSON, WB
    APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 273 - 288
  • [26] DEPOSITION-INDUCED DEFECT PROFILES IN AMORPHOUS HYDROGENATED SILICON
    HATA, N
    WAGNER, S
    ICABARROCAS, PR
    FAVRE, M
    APPLIED PHYSICS LETTERS, 1990, 56 (24) : 2448 - 2450
  • [27] Characterization of Gap Defect States in Hydrogenated Amorphous Silicon Materials
    Jiao, Lihong
    Wronski, C. R.
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008, 2008, 1066 : 99 - +
  • [28] Photoinduced structural change and defect creation in hydrogenated amorphous silicon
    Shimizu, K.
    Tabuchi, T.
    Iida, M.
    Okamoto, H.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 267 - 271
  • [29] SIGNAL GENERATION IN A HYDROGENATED AMORPHOUS-SILICON DETECTOR
    QURESHI, S
    PEREZMENDEZ, V
    KAPLAN, SN
    FUJIEDA, I
    CHO, G
    STREET, RA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (01) : 194 - 198
  • [30] Field-enhanced generation in hydrogenated amorphous silicon
    Ilie, A
    Equer, B
    PHYSICAL REVIEW B, 1998, 57 (24) : 15349 - 15359