Environments Adaptability and Failure Analysis of Nanoscale Vacuum Channel Transistors

被引：1

作者：

Li, Xinghui ^{[1
]}

Han, Panyang ^{[1
]}

Xie, Yunzhu ^{[1
]}

Du, Ting ^{[1
]}

Cai, Jun ^{[1
]}

Feng, Jinjun ^{[1
]}

机构：

[1] Beijing Vacuum Elect Res Inst, Natl Key Lab Sci & Technol Vacuum Elect, Beijing, Peoples R China

来源：

2020 IEEE 21ST INTERNATIONAL CONFERENCE ON VACUUM ELECTRONICS (IVEC 2020) | 2020年

基金：

中国国家自然科学基金;

关键词：

environments adaptability; failure analysis; air channel; transistor; emission stability;

D O I：

10.1109/IVEC45766.2020.9520635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-emitter-based nanoscale vacuum channel transistors with vertical surround-gate configuration were fabricated by using thin-film deposition and focus ion beam etching. Adaptability testing in different vacuum environments and failure analysis of the transistors were carried out to make the basis for stability enhancement and component performance improvement.

引用

页码：381 / 382

页数：2

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