Vertical GMR recording heads for 100 Gb/in2

被引：4

作者：

Mao, SN ^{[1
]}

Wang, L ^{[1
]}

Hou, CH ^{[1
]}

Murdock, E ^{[1
]}

机构：

[1] Seagate Technol, Bloomington, MN 55435 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2003年 / 39卷 / 05期

关键词：

recording heads; sensors; VGMR;

D O I：

10.1109/TMAG.2003.815461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical giant magnetoresistive (GMR) recording head designs have been proposed to achieve the optimum bias point and magnetic stability. Using a micromagnetic model, several design options were simulated and a test feature was built to validate the model prediction. The vertical GMR head uses a front lead to connect the GMR element to shield at the air-bearing surface (ABS) and the sense current passes vertically from ABS to the back lead through the active elements. Canted stabilization fields are needed for proper bias for vertical GMR (VGMR) heads. A design proposal for 100 Gb/in(2) is presented.

引用

页码：2396 / 2398

页数：3

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