DFT Study of Structural and Electronic Properties of MgZnO Alloy

被引:2
作者
Ya, Qi [1 ]
YAo, Hui [1 ]
Wang, Hao [1 ,2 ]
Zhan, Huahan [1 ]
Wu, Yaping [1 ]
Zhou, Yinghui [1 ]
Chen, Xiaohang [1 ]
Wang, Huiqiong [1 ]
Kang, Junyong [1 ]
机构
[1] Xiamen Univ, Coll Phys Sci & Technol, CI Ctr OSED, Fujian Prov Key Lab Semicond Mat & Applicat, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Res Inst Biomimet & Soft Matter, Dept Phys, Fujian Prov Key Lab Soft Funct Mat Res, Xiamen 361005, Peoples R China
关键词
MgZnO; GGA plus U; structural properties; electronic properties; FILMS;
D O I
10.1007/s11664-020-08066-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Structural and electronic properties of magnesium zinc oxide alloy with different Mg content and different configurations are studied by density functional theory. The energy track of rocksalt and wurtzite phases of MgZnO with different Mg content indicates that below 63% the wurtzite phase is energetically stable and above 63% the rocksalt phase is stable. Distribution of Mg in the MgZnO alloy is important to understand the phase segregation. By analyzing the distribution of Mg in the MgZnO alloy, we find that the energy required for two Mg to stay together is slightly larger than that for two Mg to stay apart, meaning that Mg has the potential to be uniformly distributed in the MgZnO alloy. By comparing with other dopants, we find that Mg introduces smaller lattice distortion. The corresponding electronic properties are studied by analyses of the density of state and the band structure. From the decomposed-projected band structure, we find that the energy level of O 2p orbitals is modulated to lower energy by introducing Mg, indicating that the enlargement of the band gap is partly caused by the subsidence of the valence band. For comparison, Cd modulates O 2p orbitals to a higher energy level, consistent with the presence of a narrow band gap.
引用
收藏
页码:4569 / 4576
页数:8
相关论文
共 24 条
[1]   Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition [J].
Alema, Fikadu ;
Ledyaev, Oleg ;
Miller, Ross ;
Beletsky, Valeria ;
Osinsky, Andrei ;
Schoenfeld, Winston V. .
JOURNAL OF CRYSTAL GROWTH, 2016, 435 :6-11
[2]   Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition [J].
Asahara, Hirokazu ;
Takamizu, Daiju ;
Inokuchi, Atsutoshi ;
Hirayama, Masaki ;
Teramoto, Akinobu ;
Saito, Shin ;
Takahashi, Migaku ;
Ohmi, Tadahiro .
THIN SOLID FILMS, 2010, 518 (11) :2953-2956
[3]   The structural properties of wurtzite and rocksalt MgxZn1-xO [J].
Chen, Xiaohang ;
Kang, Junyong .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (02)
[4]   Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study [J].
Dudarev, SL ;
Botton, GA ;
Savrasov, SY ;
Humphreys, CJ ;
Sutton, AP .
PHYSICAL REVIEW B, 1998, 57 (03) :1505-1509
[5]   Atomistic mechanism of shock-induced void collapse in nanoporous metals [J].
Erhart, P ;
Bringa, EM ;
Kumar, M ;
Albe, K .
PHYSICAL REVIEW B, 2005, 72 (05)
[6]   First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects [J].
Erhart, Paul ;
Albe, Karsten ;
Klein, Andreas .
PHYSICAL REVIEW B, 2006, 73 (20)
[7]   Improved adsorption energetics within density-functional theory using revised Perdew-Burke-Ernzerhof functionals [J].
Hammer, B ;
Hansen, LB ;
Norskov, JK .
PHYSICAL REVIEW B, 1999, 59 (11) :7413-7421
[8]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&
[9]   ABINITIO MOLECULAR-DYNAMICS FOR LIQUID-METALS [J].
KRESSE, G ;
HAFNER, J .
PHYSICAL REVIEW B, 1993, 47 (01) :558-561
[10]   From ultrasoft pseudopotentials to the projector augmented-wave method [J].
Kresse, G ;
Joubert, D .
PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775