Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

被引：29

作者：

Melnikov, M. Yu. ^{[1
]}

Shashkin, A. A. ^{[1
]}

Dolgopolov, V. T. ^{[1
]}

Huang, S. -H. ^{[2
,3
]}

Liu, C. W. ^{[2
,3
]}

Kravchenko, S. V. ^{[4
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[4] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 09期

基金：

美国国家科学基金会;

关键词：

CONDUCTIVITY; COLLOQUIUM;

D O I：

10.1063/1.4914007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m(2)/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al2O3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential. (C) 2015 AIP Publishing LLC.

引用

页数：4

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