Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

被引：29
|
作者：
Melnikov, M. Yu. [1 ]
Shashkin, A. A. [1 ]
Dolgopolov, V. T. [1 ]
Huang, S. -H. [2 ,3 ]
Liu, C. W. [2 ,3 ]
Kravchenko, S. V. [4 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
[4] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 09期
基金：
美国国家科学基金会;
关键词：
CONDUCTIVITY; COLLOQUIUM;
D O I：
10.1063/1.4914007
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m(2)/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al2O3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential. (C) 2015 AIP Publishing LLC.
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页数：4
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