Doping And Annealing Effect On Evaporation Of ZnO Thin Films

被引：1

作者：

Shaban, Auday H. ^{[1
]}

Maki, Samir A. ^{[1
]}

Hussain, Shahd A. ^{[1
]}

机构：

[1] Univ Baghdad, Coll Educ Pure Sci Ibn Al Haitham, Dept Phys, Baghdad, Iraq

来源：

IBN AL-HAITHAM FIRST INTERNATIONAL SCIENTIFIC CONFERENCE | 2018年 / 1003卷

关键词：

ZnO; optical properties; Sn doping; thermal evaporation; OPTICAL-PROPERTIES;

D O I：

10.1088/1742-6596/1003/1/012101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present study carried out to show the structure and optical properties of doped ZnO:Sn thin films that have been deposition on a glass substrate by thermal evaporation (using Zn metal). The percentage of dopant is (3, 5, 7, & 9)%. The annealing temperature was 200 oC fixed for one hour annealing time. The result of XRD shows the presence of (100), (002) and (101) are the diffraction peaks of all thin films. The crystalline size was found to be increased with Sn doping. The FWHM values of the peaks were found to increase with doping. The direct optical band gap was calculated and found to be (3.24, 3.21, 3.2, 2.72, 2.88) e. V for pure and doped thin films respectively.

引用

页数：11

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