A High-Efficiency High-Density Wide-Bandgap Device-Based Bidirectional On-Board Charger

被引:188
作者
Li, Bin [1 ]
Li, Qiang [1 ]
Lee, Fred C. [1 ]
Liu, Zhengyang [2 ]
Yang, Yuchen [2 ]
机构
[1] Virginia Tech, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
[2] Analog Devices Inc, Milpitas, CA 95035 USA
关键词
Bidirectional on-board charger; high efficiency; high frequency; PCB winding magnetics; wide voltage range; wide-bandgap (WBG) devices; BATTERY CHARGER; GAN HEMT; CONVERTER; VEHICLE;
D O I
10.1109/JESTPE.2018.2845846
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a novel two-stage topology for a 6.6-kW on-board charger. The first stage, employing an interleaved bridgeless totem-pole ac/dc in critical conduction mode to realize zero-voltage switching, is operated at over 300 kHz. A bidirectional CLLC resonant converter operating at 500 kHz is chosen for the second stage. A variable dc-link voltage is adopted to track the wide battery voltage range, so that the CLLC resonant converter can always operate at its most efficient point. The 1.2-kV SiC devices are adopted for the ac/dc stage and the primary side of dc/dc stage, while 650-V GaN devices are used for the secondary side of dc/dc stage. In addition, PCB winding coupled inductors and integrated transformer are implemented in ac/dc stage and dc/dc stage, respectively, for the purpose of high density and manufacture automation. The proposed structure is demonstrated to have 37-W/in(3) power density and above 96% efficiency over the entire battery voltage range, which far exceeds the current practice.
引用
收藏
页码:1627 / 1636
页数:10
相关论文
共 29 条
[1]  
[Anonymous], IEEE T POWER ELECT
[2]  
[Anonymous], 2006, P 21 ANN IEEE APPL P
[3]  
[Anonymous], 2011, P IEEE VEH POW PROP, DOI DOI 10.1109/VPPC.2011.6043192
[4]  
Biela J, 2004, IEEE POWER ELECTRON, P4537
[5]  
Chae H. J., 2011, 8th International Conference on Power Electronics - ECCE Asia, P2717
[6]   High-Efficiency High-Power-Density LLC Converter With an Integrated Planar Matrix Transformer for High-Output Current Applications [J].
Fei, Chao ;
Lee, Fred C. ;
Li, Qiang .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2017, 64 (11) :9072-9082
[7]   LLC Resonant Converter With Matrix Transformer [J].
Huang, Daocheng ;
Ji, Shu ;
Lee, Fred C. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (08) :4339-4347
[8]  
Huang XC, 2016, APPL POWER ELECT CO, P2334, DOI 10.1109/APEC.2016.7468191
[9]   Evaluation and Application of 600 V GaN HEMT in Cascode Structure [J].
Huang, Xiucheng ;
Liu, Zhengyang ;
Li, Qiang ;
Lee, Fred C. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) :2453-2461
[10]   Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration [J].
Huang, Xiucheng ;
Li, Qiang ;
Liu, Zhengyang ;
Lee, Fred C. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) :2208-2219