Spintronic Sensors

被引：124

作者：

Freitas, Paulo P. ^{[1
]}

Ferreira, Ricardo ^{[1
]}

Cardoso, Susana ^{[2
,3
]}

机构：

[1] INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal

[2] Univ Lisbon, Inst Super Tecn, Dept Phys, P-1000 Lisbon, Portugal

[3] INESC Microsyst & Nanotechnol INESC MN, P-1000029 Lisbon, Portugal

来源：

PROCEEDINGS OF THE IEEE | 2016年 / 104卷 / 10期

基金：

欧盟第七框架计划;

关键词：

Biochips; magnetic detectivities; magnetoresistive sensors; microelectrodes; noise; MAGNETIC TUNNEL-JUNCTIONS; ION-BEAM DEPOSITION; GIANT MAGNETORESISTANCE; EDDY CURRENTS; ANISOTROPY; LINEARIZATION; INTEGRATION; MICROARRAY; NOISE; COFEB;

D O I：

10.1109/JPROC.2016.2578303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes how magnetoresistive materials can be optimized and integrated in magnetic field sensor devices. Giant magnetoresistive (GMR) and tunnel magnetoresistive (TMR) can provide advantageous solutions for a wide range of applications, of which some are described here. Considerations on field sensitivities, intrinsic noise mechanisms, biasing, and integration schemes are presented.

引用

页码：1894 / 1918

页数：25

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