Constant energy device test for electrostatic discharge (ESD) of semiconductor devices

被引：2
作者：
Greason, WD
Bulach, S
机构：
[1] Department of Electrical Engineering, Faculty of Engineering Science, University of Western Ontario, London
来源：
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1997年 / 33卷 / 01期
关键词：
D O I：
10.1109/28.567133
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An analysis is presented for the models and test methods used to simulate the electrostatic discharge (ESD) event for a charged semiconductor device. A new constant energy device (CED) test method is proposed to provide control of charge and potential for constant energy discharges and give a better evaluation of device reliability. Experimental results are presented for tests conducted on a basic CMOS structure.
引用
收藏
页码：286 / 297
页数：12
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