The Effect of Silicon Oxide Based RRAM with Tin Doping

被引：52

作者：

Chang, Kuan-Chang ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Syu, Yong-En ^{[3
]}

Chuang, Siang-Lan ^{[1
]}

Li, Cheng-Hua ^{[1
]}

Gan, Der-Shin ^{[1
]}

Sze, Simon M. ^{[3
,4
,5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 03期

关键词：

RESISTIVE SWITCHING CHARACTERISTICS; CURRENT-VOLTAGE CHARACTERISTICS; FILMS;

D O I：

10.1149/2.013203esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. But silicon oxide cannot be used as resistance random access memory (RRAM) due to its native electrical properties. In this work, based on the concept of inducing defect by metal doping into insulator, silicon oxide with a few tin dopants at room temperature can successfully be used as switching layer in RRAM. According to electrical analyses, the current transport mechanism in Sn-doped silicon oxide is governed by Pool-Frenkel emission, which demonstrates the conduction path in the RRAM guided by Sn doping induced defect. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.013203esl] All rights reserved.

引用

页码：H65 / H68

页数：4

共 20 条

[1] The structure and vibrational spectra of isotopomers of SnOH and OSnH [J].

Ball, DW .

JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2003, 626 :217-221

[2] Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[3]

Beck A., 2001, J APPL PHYS, V90, P2892

[4]

Chang Ting-Chang, 2011, MATER TODAY, V14, P526

[5] Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Huang, Sheng-Yao ;

Chen, Shih-Ching ;

Hu, Chih-Wei ;

Tsai, Chih-Tsung ;

Sze, Simon M. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) :II191-II193

[6] Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory [J].

Chen, Shih-Cheng ;

Chang, Ting-Chang ;

Chen, Shih-Yang ;

Li, Hung-Wei ;

Tsai, Yu-Ting ;

Chen, Chi-Wen ;

Sze, S. M. ;

Yeh, Fon-Shan ;

Tai, Ya-Hsiang .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (02) :H103-H106

[7] Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device [J].

Chen, Te-Chih ;

Chang, Ting-Chang ;

Jian, Fu-Yen ;

Chen, Shih-Ching ;

Lin, Chia-Sheng ;

Lee, Ming-Hsien ;

Chen, Jim-Shone ;

Shih, Ching-Chieh .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (08) :834-836

[8] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 [J].

Fujii, T ;

Kawasaki, M ;

Sawa, A ;

Akoh, H ;

Kawazoe, Y ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :012107-1

[9] CONSIDERATION OF POOLE-FRENKEL EFFECT ON ELECTRIC CONDUCTION IN INSULATORS [J].

IEDA, M ;

SAWA, G ;

KATO, S .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :3737-&

[10] Organic electrical bistable devices and rewritable memory cells [J].

Ma, LP ;

Liu, J ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (16) :2997-2999

← 1 2 →