The Effect of Silicon Oxide Based RRAM with Tin Doping

被引：52

作者：

Chang, Kuan-Chang ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Syu, Yong-En ^{[3
]}

Chuang, Siang-Lan ^{[1
]}

Li, Cheng-Hua ^{[1
]}

Gan, Der-Shin ^{[1
]}

Sze, Simon M. ^{[3
,4
,5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 03期

关键词：

RESISTIVE SWITCHING CHARACTERISTICS; CURRENT-VOLTAGE CHARACTERISTICS; FILMS;

D O I：

10.1149/2.013203esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. But silicon oxide cannot be used as resistance random access memory (RRAM) due to its native electrical properties. In this work, based on the concept of inducing defect by metal doping into insulator, silicon oxide with a few tin dopants at room temperature can successfully be used as switching layer in RRAM. According to electrical analyses, the current transport mechanism in Sn-doped silicon oxide is governed by Pool-Frenkel emission, which demonstrates the conduction path in the RRAM guided by Sn doping induced defect. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.013203esl] All rights reserved.

引用

页码：H65 / H68

页数：4

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