Titanium nitride micro-electromechanical bridge for wavelength-selective switching

被引:1
作者
Takahashi, S [1 ]
Nielson, GN [1 ]
Seneviratne, D [1 ]
Barbastathis, G [1 ]
Tuller, HL [1 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
来源
IEEE/LEOS Optical MEMs 2005: International Conference on Optical MEMs and Their Applications | 2005年
关键词
titanium compounds; stress control; microelectromechanical devices; photonic switching systems;
D O I
10.1109/OMEMS.2005.1540066
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on the use of titanium nitride (TiN) in a MEMS-based wavelength specific waveguide optical switch. By interfering a conductive MEMS bridge with the evanescent field of a ring resonator add/drop filter, the device can switch between enabling or disabling the ring resonator. Problems with residual stresses in the MEMS bridges, leading to bridge deflection and thereby causing incomplete switching between the states, -,vas addressed by the use of TiN as the MEMS bridge material. TiN has the virtue of being able to almost completely. We demonstrate the ability to virtually eliminate the residual stresses in TiN and thereby improve the bridge profile, promising much improved switching characteristics.
引用
收藏
页码:41 / 42
页数:2
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