Thermal relaxation of isolated silicon pyramids on the Si(100)2 x 1 surface

被引：6

作者：

Ichimiya, A ^{[1
]}

Suzuki, M ^{[1
]}

Nishida, S ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

SURFACE SCIENCE | 2001年 / 493卷 / 1-3期

关键词：

scanning tunneling microscopy; surface diffusion; silicon;

D O I：

10.1016/S0039-6028(01)01265-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon mounds fabricated on the Si(1 0 0)2 x 1 surface by a tip of a scanning tunneling microscope (STM) have been observed by STM at substrate temperature of 770 K. The shape of the mound is a quadrangular pyramid with facets of regular array of steps with double layer height. For all the step, the dimer rows are perpendicular to the step edges, so called the D-B step. Just after the fabrication, the pyramid begins to decay immediately layer-by-layer. During decay, the D-B steps move scarcely, but only the S-B steps at the bottom layer move due to attachment and detachment of atoms which are detached from the upper layers. For a single layer mound, the aspect ratio of the mound oscillates between about 2.5 and 1.5. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：555 / 560

页数：6

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