Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon

被引：14

作者：

Demenev, E. ^{[1
,3
]}

Giubertoni, D. ^{[1
]}

van den Berg, J. ^{[2
]}

Reading, M. ^{[2
]}

Bersani, M. ^{[1
]}

机构：

[1] FBK, CMM, I-38123 Povo, Trento, Italy

[2] Univ Salford, Mat & Phys Res Ctr, Joule Phys Lab, Salford M5 4WT, Lancs, England

[3] Univ Trent, Dept Phys, I-38123 Povo, Trento, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 273卷

关键词：

SIMS; MEIS; Ultra-shallow junctions; Ion implantation; Arsenic; Silicon; QUANTIFICATION; DAMAGE;

D O I：

10.1016/j.nimb.2011.07.073

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 0.5-5 keV. MEIS offers the advantage of accurate quantification and ultimate depth resolution <1 nm but the detection limit achievable is always poorer than the one obtained by SIMS. The comparison of the results obtained by the two techniques allows to discriminate among different SIMS quantification processes in order to individuate the best in terms of accuracy in the initial transient width and at the SiO2-silicon interface and develop quantitative model for SIMS profiles to align them to the curves as determined by MEIS. This model relies on different sputtering condition in SiO2 (such as sputtering rate and ion yield) and additionally compensates analysis behavior in SiO2/Si interface. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：192 / 194

页数：3

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