GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer

GaAs-based double-heterojunction p-i-n photodetectors using InzGa1-zAs1-x-yNxSby in the i layer is fabricated for the first time using the solid source molecular beam epitaxy growth method. The surfactant effect generated by the presence of Sb in this material allows thick high-quality dilute nitride material growth. A peak responsivity of similar to 0.29 A/W, corresponding to quantum efficiencies of 38% is attained between 0.9 and 1.1 mu m from the best p-i-n device. The cutoff wavelength reaches similar to 1.4 mu m and the dark current is similar to 0.43 mA/cm(2) at a reverse bias of 2 V. A Sb-free p-i-n device consisting of InGaAsN-GaAs is also fabricated to compare the device performance with the InGaAsNSb-GaAs p-i-n devices.