Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

被引：54

作者：

Li, A. H. ^{[1
]}

Shahbazi, M. ^{[1
]}

Zhou, S. H. ^{[1
]}

Wang, G. X. ^{[1
]}

Zhang, C. ^{[1
]}

Jood, P. ^{[1
]}

Peleckis, G. ^{[1
]}

Du, Y. ^{[1
]}

Cheng, Z. X. ^{[1
]}

Wang, X. L. ^{[1
]}

Kuo, Y. K. ^{[2
]}

机构：

[1] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia

[2] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

基金：

澳大利亚研究理事会;

关键词：

Thermoelectric materials; Bi2Te3; Graphene; Seebeck coefficient; Conductivity; Density of states;

D O I：

10.1016/j.tsf.2010.03.124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure and thermoelectric properties of Bi2Te3 single crystals and graphene-doped Bi2Te3 polycrystalline samples were investigated with the aid of first-principles calculations, X-ray diffraction, scanning electron microscopy, Rietveld refinement, and thermal and transport measurements. It was found that the p electrons from the Bi and Te atoms are responsible for the density of states near the Fermi level. Experimental results show that the graphene-doped Bi2Te3 exhibits lower thermal conductivity and has a higher figure-of-merit than the single crystals. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：E57 / E60

页数：4

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