Shot Noise in Single-Electron Tunneling Systems: A Semiclassical Model

被引：1
|
作者：
Babiker, S. [1 ]
机构：
[1] Univ Khartoum, Fac Engn, Dept Elect & Elect Engn, Khartoum 11115, Sudan
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2011年 / 10卷 / 05期
关键词：
Quantum dots; shot noise; tunneling;
D O I：
10.1109/TNANO.2011.2127484
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, shot noise in single-electron tunneling circuits is studied using a semiclassical approach based on the master equation formalism where the transport through the circuit is modeled as sets of sequential stationary Poisson processes. Analytical expressions for the distribution of time between tunnel events and the resulting power spectral density S(f) are derived. The model is then used to investigate the correlated transfer of electrons and fluctuations in homogeneous long arrays of tunnel junctions.
引用
收藏
页码：1191 / 1195
页数：5
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