Comment on "An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET"

被引：5

作者：

Ananda, A. ^{[1
]}

Chauhan, S. S. ^{[2
]}

Prakash, A. ^{[3
]}

机构：

[1] Natl Inst Technol, Sch VLSI Design & Embedded Syst Dept, Kurukshetra 136119, Haryana, India

[2] Natl Inst Technol, Dept Elect & Commun Engn, Kurukshetra 136119, Haryana, India

[3] Natl Inst Technol, Dept Math, Kurukshetra 136119, Haryana, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 02期

关键词：

Band-to-band tunneling; tunnel FET (TFET);

D O I：

10.1109/TED.2018.2882524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied carefully the paper of Bagga and Sarkar, which describes tunnel barrier modulation of double-gate tunnel FET with triple metal and deals with its analytical model. However, some expressions are erroneous in the paper. We believe it needs to be rectified further for the scientific correctness of the result. Therefore, we would like to submit some remarks, as follows, pertaining to the errors occurred. In this comment, the previously presented expressions at page 2137 of Section III-A regarding limits of dimension of the metal gate and other expressions in boundary conditions have been corrected. The symbols, having usual meanings, have been retained for easy comparison between this and reference journal.

引用

页码：1123 / 1124

页数：2