A 0.5 V Sub-Threshold CMOS Current-Controlled Ring Oscillator for IoT and Implantable Devices

被引:6
作者
Ballo, Andrea [1 ]
Pennisi, Salvatore [1 ]
Scotti, Giuseppe [2 ]
Venezia, Chiara [1 ]
机构
[1] Univ Catania, Dipartimento Ingn Elettr Elettron & Informat DIEE, I-95125 Catania, Italy
[2] Sapienza Univ Rome, Dipartimento Ingn Informaz Elettron & Telecomunic, I-00184 Rome, Italy
关键词
ring oscillator; body biasing; tuning range; PHASE NOISE; IMPLEMENTATION; SENSOR; BODY;
D O I
10.3390/jlpea12010016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A current-controlled CMOS ring oscillator topology, which exploits the bulk voltages of the inverter stages as control terminals to tune the oscillation frequency, is proposed and analyzed. The solution can be adopted in sub-1 V applications, as it exploits MOSFETS in the subthreshold regime. Oscillators made up of 3, 5, and 7 stages designed in a standard 28-nm technology and supplied by 0.5 V, were simulated. By exploiting a programmable capacitor array, it allows a very large range of oscillation frequencies to be set, from 1 MHz to about 1 GHz, with a limited current consumption. Considering, for example, the five-stage topology, a nominal oscillation frequency of 516 MHz is obtained with an average power dissipation of about 29 mu W. The solution provides a tuneable oscillation frequency, which can be adjusted from 360 to 640 MHz by controlling the bias current with a sensitivity of 0.43 MHz/nA.
引用
收藏
页数:17
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